An ambient temperature dependent small signal model of GaN HEMT using method of curve fitting

摘要

In this article, ambient temperature effect on small signal model of AlGaN/GaN HEMT has been explored. Based on the study, an analytical method tounderstand the ambient temperature dependence on device behavior has beendeveloped. Effectiveness of the proposed method has been illustrated throughcomparison with measured data. Moreover, comparison with other analyticalmethods has also been carried out illustrating its acceptability threshold.