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首页> 外文期刊>International Journal of Reliability, Quality and Safety Engineering >DEVELOPMENT OF A DUAL BURN-IN POLICY FOR SEMICONDUCTOR PRODUCTS BASED ON THE NUMBER OF DEFECTIVE NEIGHBORHOOD CHIPS
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DEVELOPMENT OF A DUAL BURN-IN POLICY FOR SEMICONDUCTOR PRODUCTS BASED ON THE NUMBER OF DEFECTIVE NEIGHBORHOOD CHIPS

机译:基于缺陷近邻芯片的数量制定半导体产品双重烧录政策

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摘要

Most of the previous studies on developing an optimal burn-in policy for semiconductor products only deal with the burn-in process itself and little is concerned with utilizing the information on the quality levels of chips before being subjected to burn-in. Developed in this paper is a dual burn-in policy in which the number of chips (d) which do not pass the wafer probe (WP) test and lie in the neighborhood of a reference chip is utilized as an indicator on the quality level of that reference chip. The dual burn-in policy first classifies the chips which pass the WP test into two groups using a boundary value of d, and then each group is subject to burn-in for its own duration. For a certain type of 256M DRAM product, the performance of the proposed dual burn-in policy is compared to that of the single burn-in policy in which all chips are subjected to the burn-in of the same duration without considering d. The analysis results show that, for the cases considered, the proposed dual burn-in policy is more cost-effective than the single burn-in policy, implying that the additional information from the WP test is beneficial to establishing an efficient burn-in policy in semiconductor manufacturing.
机译:先前针对半导体产品制定最佳老化策略的大多数研究都只涉及老化过程本身,很少涉及在老化之前利用芯片质量水平信息。本文开发了一种双重老化策略,其中未通过晶圆探针(WP)测试且位于参考芯片附近的芯片数量(d)被用作衡量产品质量水平的指标。该参考芯片。双重预烧策略首先使用d的边界值将通过WP测试的芯片分为两类,然后对每组进行预烧。对于某种类型的256M DRAM产品,将拟议的双重预烧策略的性能与单次预烧策略的性能进行比较,在一次预烧策略中,所有芯片都经过相同持续时间的预烧,而不考虑d。分析结果表明,对于所考虑的情况,拟议的双重老化策略比单一老化策略更具成本效益,这意味着可湿性粉剂测试产生的额外信息有利于建立有效的老化策略在半导体制造中。

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