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首页> 外文期刊>International Journal of Optoelectronics >Pulsed L-I characteristics of 670nm AlGainP/InGaP broad area lasers
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Pulsed L-I characteristics of 670nm AlGainP/InGaP broad area lasers

机译:670nm AlGainP / InGaP广域激光器的脉冲L-I特性

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摘要

We report the results of the pulsed L-I characteristics of 670 nm AlGaInP/InGaP broad area lasers. The measured pulsed L-I curves are found to be strongly dependent on the duty cycles of the applied current pulses, which were mainly attributed to the heating effect within the AlGaInP/InGaP lasers. Current pulse heating effects are negligible only at pulse duty cycles Of 0.036/100 or below.
机译:我们报告了670 nm AlGaInP / InGaP广域激光器的脉冲L-I特性的结果。发现测得的脉冲L-I曲线在很大程度上取决于所施加电流脉冲的占空比,这主要归因于AlGaInP / InGaP激光器内部的热效应。仅当脉冲占空比为0.036 / 100或更低时,电流脉冲加热效应才可忽略不计。

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