Measurement of enhanced radiant power of internal second harmonic generation in InGaAs/GaAs/AlGaAs strained SQW BH LDs, by an indirect method

摘要

For the evaluation of internal second harmonic generation (ISHG) radiant power from InGaAs/GaAs/AlGaAs strained single quantum well buried heterostructure laser diodes (SQW BH LDs), we used a simple indirect method based on photomultiplier response calibration with the aid of an Ar~+ laser tuned close enough to the ISHG wavelength. The observation of ISHG emission at ～ 476 nm, with radiant power of a few nanowatts, can ease the way for increased detection efficiency and higher resolution in the near-field optical microscopy of the laser diode mirror facet.