Analytical modeling of 2DEG with 2DHG polarization charge density drain current and small‐signal model of quaternary AlInGaN HEMTs for microwave frequency applications

摘要

A physics-based analytical model for quaternary AlInGaN high electron mobility transistors (HEMTs) is developed including two-dimensional electron gas (2DEG) and two-dimensional hole gas (2DHG) for microwave applications. The DC and RF performance characteristics are explored by considering the quasi-triangular quantum well (QW). The derived charge carrier densities n(s)and p(s)are considered for energy subbands E-o and E-1 inside QW. The 2DEG sheet carrier concentration density remains constant as long as 2DHG exists. From the derived model, the drain current (I-d), transconductance current gain (g(m)), and cutoff frequency (f(t)) for different gate length and width are verified with experimental data for upcoming nano-scale devices.