机译:使用软X射线退火方法消除P-N结二极管中的瞬态电子陷阱
Department of Electronics Engineering, Faculty of Engineering, King Mongkut's Institute of Technology Ladkrabang, Bangkok 10520, Thailand;
Department of Electronics Engineering, Faculty of Engineering, King Mongkut's Institute of Technology Ladkrabang, Bangkok 10520, Thailand;
Department of Electronics Engineering, Faculty of Engineering, King Mongkut's Institute of Technology Ladkrabang, Bangkok 10520, Thailand;
Thai Microelectronics Center (TMEC), 51/4 Moo 1, Wang-Takien District, Amphur Muang, Chachoengsao 24000, Thailand;
transient hump; high energy ion implantation; soft X-ray annealing method;
机译:PN结二极管的X射线软退火工艺研究
机译: p-n i>结二极管的X射线软退火工艺研究
机译:退火温度对通过化学沉淀方法对P-N结二极管施加制备的钼纳米粒子性能的影响
机译:使用软X射线退火方法改善P-N二极管的正向电流
机译:p型和n型碳化硅的欧姆接触的制造和表征,并应用于p-n结二极管。
机译:栅可调并五苯/ MoS2 p-n异质结二极管的陷阱介导电子输运性质
机译:通过组合电子全息和聚焦离子束铣削,在反向偏置间隙发光二极管中观察P-N结
机译:在背景限制条件下p-N结二极管和肖特基内部光电二极管的检测率比较