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首页> 外文期刊>International journal of impact engineering >Modeling damage in silicon carbide due to an impact stress below the HEL
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Modeling damage in silicon carbide due to an impact stress below the HEL

机译:由于低于HEL的冲击应力而造成的碳化硅建模损坏

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摘要

The spall strength of silicone carbide processed by spark plasma sintering (SPS) has been previously studied. It was shown that SPS-silicone carbide, like other ceramics, exhibits a reduction in the spall stress when the impact stress exceeds roughly 7 GPa which is significantly lower than the stress at the Hugoniot Elastic Limit (HEL) which is over 15 GPa. A constitutive model is formulated that predicts a reduction in the spall stress below the HEL that is caused by rate-dependent damage evolution which is coupled to effective rates of inelastic distortion and porous dilation. It is shown that while damage and inelastic distortion may reduce the strength of the ceramic, porous dilation coupled to rate-dependent inelasticity may stiffen the stress loading wave so that the HEL of the material appears to be higher. The relationship between the spall stress and the impact stress obtained from the simulations is in good agreement with the test data. The results also indicate that the constitutive model captures behavior characteristic of a damage front propagating in brittle materials.
机译:先前已经研究了通过火花等离子体烧结(SPS)处理的碳化硅的剥落强度。结果表明,当冲击应力超过大约7 GPa时,SPS碳化硅与其他陶瓷一样,表现出剥落应力的减小,这明显低于Hugoniot弹性极限(HEL)超过15 GPa的应力。制定了本构模型,该模型预测了由速率相关的损伤演变导致的剥落应力降低,低于HEL,这与无弹性变形和多孔扩张的有效速率相关。结果表明,虽然损伤和非弹性变形会降低陶瓷的强度,但与速率相关的非弹性耦合的多孔膨胀可能会加剧应力加载波,从而使材料的HEL更高。从模拟中获得的剥落应力和冲击应力之间的关系与测试数据非常吻合。结果还表明,本构模型捕获了脆性材料中传播的损伤前沿的行为特征。

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