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Defect engineering of graphene for effective hydrogen storage

机译:石墨烯的缺陷工程可有效储氢

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摘要

Although several modifications to grapheneiiave been proposed to improve its hydrogen binding to practical levels, current theoretical studies largely neglect the role of topological defects. In this paper we analyze the effect of these defects and their possible use in a hydrogen storage system. Hydrogen physisorption on five types of point defects (Stone-Wales, single vacancy and three types of double vacancy) was investigated using density functional theory with the PBE-GGA functional. Point defects were also repeated with the vdW-DF2 functional to better represent long range van der Waals interactions. Although none of the defects were found to be detrimental to hydrogen anchoring, only the single vacancy showed promising hydrogen binding in the ideal range. Model systems combining different defects were also explored, including a defect-anchored metal system, a bilayer graphene system and a grain-boundary system. Finally, two high defect density structures constructed using vacancies and combined Stone-Wales defects and vacancies yielded gravimetric densities of 5.81% and 7.02%, respectively, with the vdW functional. This study suggests that graphene can be defect-engineered to develop effective hydrogen storage media.
机译:尽管提出了对石墨烯的几种修饰以提高其氢键结合到实际水平,但目前的理论研究在很大程度上忽略了拓扑缺陷的作用。在本文中,我们分析了这些缺陷的影响及其在储氢系统中的可能用途。利用具有PBE-GGA功能的密度泛函理论,研究了氢对五种类型的点缺陷(石-威尔士,单空位和三种双空位)的物理吸附。还使用vdW-DF2功能重复点缺陷,以更好地表示远距离范德华相互作用。尽管没有发现任何缺陷对氢锚定有害,但只有一个空位显示出在理想范围内有希望的氢键结合。还探索了结合不同缺陷的模型系统,包括缺陷锚固金属系统,双层石墨烯系统和晶界系统。最后,使用空位以及Stone-Wales缺陷和空位组合构造的两个高缺陷密度结构,重量密度分别为5.81%和7.02%,具有vdW功能。这项研究表明,可以对石墨烯进行缺陷工程以开发有效的氢存储介质。

著录项

  • 来源
    《International journal of hydrogen energy 》 |2014年第10期| 4981-4995| 共15页
  • 作者单位

    Department of Materials Science and Engineering, University of Toronto, 184 College Street, Suite 140, Toronto, Ontario M5S 3E4, Canada;

    Department of Materials Science and Engineering, University of Toronto, 184 College Street, Suite 140, Toronto, Ontario M5S 3E4, Canada;

    Department of Materials Science and Engineering, University of Toronto, 184 College Street, Suite 140, Toronto, Ontario M5S 3E4, Canada;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    Hydrogen storage; Graphene; Topological defects; Defect-engineering; Physisorption;

    机译:储氢;石墨烯拓扑缺陷;缺陷工程;物理吸收;

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