The doping effect on the properties of zinc oxide (ZnO) thin layers for photovoltaic applications

摘要

In this study, we experimentally elaborated Copper- and Indium-doped Zinc Oxide (Cu: ZnO and In: ZnO) thin films at different temperatures (T-1 = 480 degrees C and T-2 = 520 degrees C), the doping ratio were varied between 0% and 8%. Using a low cost solution-based chemical deposition, we have developed a ZnO thin film deposition process that offers fine-control of the surface morphology. It consists in spraying a volatile compound of the material to be deposited on a substrate maintained at high temperature to cause a chemical reaction in order to form at least one solid product. Therefore, the proposed ZnO doped layer is highly promising for applications for the next-generation solar cells. Copyright (C) 2015, Hydrogen Energy Publications, LLC. Published by Elsevier Ltd. All rights reserved.