Numerical simulation of GaN single-crystal growth process in ammonothermal autoclave - Effects of baffle shape

摘要

The numerical simulation of an ammonothermal process for growing GaN bulk single crystals has been performed by using the SC/Tetra computational fluid dynamics software. The autoclave is assumed to be axisymmetric. Heat transfer by natural convection is discussed in the case of flat and funnel-shaped baffles. Simulation results show that the optimum baffle angle is approximately 20°. This result is identical to that obtained in our previous study on the hydrothermal ZnO crystal growth process.