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首页> 外文期刊>International Journal of Heat and Mass Transfer >Analysis of charge, momentum and energy transfer by an impinging sub-keV electron beam on a conductor via Monte Carlo simulation including secondary-electron generation
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Analysis of charge, momentum and energy transfer by an impinging sub-keV electron beam on a conductor via Monte Carlo simulation including secondary-electron generation

机译:通过包括次级电子生成在内的蒙特卡罗模拟分析导体上的次keV电子束撞击导体上的电荷,动量和能量转移

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摘要

In this work, a Monte Carlo simulation code for the electron-beam propagation was developed using the Mott's elastic scattering cross section and the Penn's dielectric function to account for beam scatterings and energy losses. Additional steps were introduced to compute the electron density profile, the momen tum distribution, and the kinetic energy deposited inside the target material due to the penetration of the beam. Details of the simulation were outlined and backscattering results were validated against available data in the literature. Various parameters that govern the simulation were discussed extensively. It was shown that the electron deposition distributions were highly non-uniform. The electron density inside the target was modified significantly due to the beam and it depleted at a few nanometers below the sur face while charge accumulation occurred deeper below the surface. On the other hand, the electron momentum deposited within the workpiece showed sign of increasing average electron velocity in all directions. In terms of the kinetic energy transfer, the energy distribution reached maximum at a few nanometers below the surface. Results between gold (a conductor) and silicon (an insulator) were com pared as well, and they differed in magnitude and local deposition distributions, although the overall trends of the deposition distributions were similar.
机译:在这项工作中,使用Mott的弹性散射截面和Penn的介电函数开发了电子束传播的蒙特卡洛模拟代码,以解决电子束的散射和能量损失。引入了附加步骤来计算电子密度分布,动量分布以及由于电子束的穿透而沉积在目标材料内部的动能。概述了模拟的细节,并根据文献中的可用数据验证了反向散射结果。讨论了控制模拟的各种参数。结果表明,电子沉积分布高度不均匀。靶子内部的电子密度由于电子束而显着改变,并且在表面以下几纳米处耗尽,而电荷积累发生在表面以下。另一方面,沉积在工件内的电子动量显示出在所有方向上平均电子速度增加的迹象。在动能传递方面,能量分布在表面以下几纳米处达到最大值。还比较了金(导体)和硅(绝缘体)之间的结果,尽管其总体趋势相似,但其大小和局部沉积分布也有所不同。

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