Modified telescopic amplifier with improved DC gain in 0.18 μm CMOS process

摘要

A new operational amplifier is presented based on the conventional telescopic amplifier structure. A novel method is used to increase the DC gain of the telescopic amplifier. This method does not degrade the output swing, bandwidth, settling time and the phase margin of the telescopic amplifier. Proposed structure has been simulated by HSPICE software using level 49 parameters (BSIM3v3) in a typical 0.18 μm Complementary metal-oxide-semiconductor (CMOS) technology. HSPICE simulation confirms the theoretical estimated improvements.