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Compact CMOS active quenching/recharge circuit for SPAD arrays

机译:适用于SPAD阵列的紧凑型CMOS有源淬灭/充电电路

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Avalanche diodes operating in Geiger mode are able to detect single photon events. They can be employed to photon counting and time-of-flight estimation. In order to ensure proper operation of these devices, the avalanche current must be rapidly quenched, and, later on, the initial equilibrium must be restored. In this paper, we present an active quenching/recharge circuit specially designed to be integrated in the form of an array of single-photon avalanche diode (SPAD) detectors. Active quenching and recharge provide benefits like an accurately controllable pulse width and afterpulsing reduction. In addition, this circuit yields one of the lowest reported area occupations and power consumptions. The quenching mechanism employed is based on a positive feedback loop that accelerates quenching right after sensing the avalanche current. We have employed a current starved inverter for the regulation of the hold-off time, which is more compact than other reported controllable delay implementations. This circuit has been fabricated in a standard 0.18 mu m complementary metal-oxide-semiconductor (CMOS) technology. The SPAD has a quasi-circular shape of 12 mu m diameter active area. The fill factor is about 11%. The measured time resolution of the detector is 187ps. The photon-detection efficiency (PDE) at 540nm wavelength is about 5% at an excess voltage of 900mV. The break-down voltage is 10.3V. A dark count rate of 19kHz is measured at room temperature. Worst case post-layout simulations show a 117ps quenching and 280ps restoring times. The dead time can be accurately tuned from 5 to 500ns. The pulse-width jitter is below 1.8ns when dead time is set to 40ns. Copyright (c) 2015 John Wiley & Sons, Ltd.
机译:在盖革模式下运行的雪崩二极管能够检测单光子事件。它们可用于光子计数和飞行时间估计。为了确保这些设备的正常运行,必须迅速消除雪崩电流,然后必须恢复初始平衡。在本文中,我们介绍了一种主动淬灭/充电电路,该电路专门设计为以单光子雪崩二极管(SPAD)检测器阵列的形式集成。主动淬火和充电提供了诸如可精确控制的脉冲宽度和减少后脉冲的优势。此外,该电路产生的面积占用和功耗最低,是其中之一。所采用的淬灭机制基于正反馈环路,该环路在检测到雪崩电流后立即加速淬灭。我们采用了电流不足的逆变器来调节保持时间,该保持时间比其他报告的可控延迟实现更为紧凑。该电路采用标准的0.18μm互补金属氧化物半导体(CMOS)技术制造。 SPAD具有有效直径为12微米的准圆形形状。填充系数约为11%。检测器的测量时间分辨率为187ps。在900mV的过电压下,540nm波长的光子检测效率(PDE)约为5%。击穿电压为10.3V。在室温下测得的暗计数率为19kHz。最差的布局后仿真显示了117ps的猝灭和280ps的恢复时间。死区时间可以精确地从5ns调整到500ns。死区时间设置为40ns时,脉冲宽度抖动低于1.8ns。版权所有(c)2015 John Wiley&Sons,Ltd.

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