A class-AB flipped voltage follower cell with high symmetrical slew rate and high current sourcing/sinking capability

摘要

The paper presents a class-AB flipped voltage follower (FVF) cell based on quasi-floating gate and bulk-driven techniques. Using these two techniques, the proposed class-AB FVF cell offers high current sourcing/sinking capability and high symmetrical slew rate without any additional circuitry. The physical layout of proposed class-AB FVF cell has been designed in Cadence Virtuoso Layout XL editor using BSIM3v3 180 nm CMOS technology, and post-layout simulation results have been presented to validate its performance.