Effects of a Conducting LaNiO_3 Thick Film as a Buffer Layer of a Pb(Zr,Ti)O_3 Film on Titanium Substrates

摘要

A conducting 8-μm-thick LaNiO_3 (LNO) film was deposited on a Ti substrate by aerosol deposition for use as a diffusion barrier between a lead zirconate titanate (PZT) and a Ti substrate during postannealing. The deposited 20-μm-thick PZT films were annealed at 800℃. The PZT film deposited without LNO was cracked and partially detached from the substrate after postannealing, presumably due to a severe reaction with the Ti substrate, while no significant reactions were observed when the LNO buffer layer was used. The remnant polarization and relative dielectric constant of the 20-μm-thick annealed PZT films deposited on the LNO-buffered Ti substrate were 43 μC/cm~2 and 1010, respectively.