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机译:Al_(0.27)Ga_(0.73)N / AlN / Al_(0.04)Ga_(0.96)N / GaN HEMT的栅极宽度对其性能的影响
Key Laboratory of RF Circuit and System, Education Ministry, Hangzhou Dianzi University, Hangzhou 310018, China;
Key Laboratory of RF Circuit and System, Education Ministry, Hangzhou Dianzi University, Hangzhou 310018, China,Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China;
Key Laboratory of RF Circuit and System, Education Ministry, Hangzhou Dianzi University, Hangzhou 310018, China;
机译:Al0.27Ga0.73N / AlN / Al0.04Ga0.96N / GaN HEMT的栅极宽度对其性能的影响
机译:基于人工神经网络的毫米波Al_(0.27)Ga_(0.73)N / AlN / GaN HEMT的新型建模
机译:复合通道IN_(0.17)AL_(0.83)N / IN_(0.1)GA_(0.9)N / GAN / AL_(0.04)GA_(0.96)N高电子移动晶体管用于RF应用
机译:在45nm栅极长度下改善AL_(0.27)Ga_(0.73)N / GaN HEMT的跨导和栅极源电容,用IN_(0.1)GA_(0.9)N屏障
机译:机械应力对AlGaN / GaN HEMT性能的影响:沟道电阻和栅极电流。
机译:以AlN / GaN超晶格为阻挡层的MOCVD法生长GaN HEMT中的2-DEG特性
机译:基于同步加速器的光致发光激发光谱用于研究AlN和$ Al_ {0.94} Ga_ {0.06} N $的价带分裂