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Multithreshold voltage low-swing/low-voltage techniques in logic gates

机译:逻辑门中的多阈值电压低摆幅/低压技术

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摘要

A low-power design circuit using low-swing voltage technique is proposed in this paper. The proposed technique could be used in order to decrease the power dissipation in three different types of logic gates namely the complementary pass-transistor logic (CPL), the cascade voltage switch logic (CVSL), and the domino logic. The main idea of the proposed technique is based on the replacement of the conventional CMOS inverter at the output of the logic gates with a new low-swing voltage inverter based on multithreshold voltage technology (LSIM). The inserted LSIM achieves a reduction in the static power dissipation, the dynamic power dissipation as the propagation delay time of the gates. To demonstrate the impact of the proposed technique in different applications, various types of circuits are designed for different conditions of: speed operation, load capacitance and supply voltages. In order to ensure the validity of the proposed technique in large circuit designs and fanout, a 8_bit Braun multiplier is designed in the three types of logic gates. SPICE simulation results for 3.3 V supply voltage using 0.5 μm multithreshold technology prove that 32%, 30% and 34%, reduction in power dissipation and 10%, 12% and 15% reduction in delay time could be achieved for the CPL, CVSL and domino logic gates respectively.
机译:本文提出了一种采用低摆幅电压技术的低功耗设计电路。可以使用所提出的技术来减少三种不同类型的逻辑门的功率损耗,这三种逻辑门分别​​是互补传输晶体管逻辑(CPL),级联电压开关逻辑(CVSL)和多米诺逻辑。所提出技术的主要思想是基于逻辑门输出处的传统CMOS反相器被基于多阈值电压技术(LSIM)的新型低摆幅电压反相器取代。插入的LSIM降低了静态功耗,动态功耗作为门的传播延迟时间而减小。为了证明所提出的技术在不同应用中的影响,针对以下条件设计了各种类型的电路:速度操作,负载电容和电源电压。为了确保所提出的技术在大型电路设计和扇出中的有效性,在三种类型的逻辑门中设计了一个8位Braun乘法器。使用0.5μm多阈值技术的3.3 V电源电压的SPICE仿真结果证明,对于CPL,CVSL和CPL,可实现32%,30%和34%的功耗降低以及10%,12%和15%的延迟时间降低。多米诺骨牌逻辑门。

著录项

  • 来源
    《Integration》 |2004年第2期|p.283-298|共16页
  • 作者单位

    Computer Engineering Department, VLSI Design Laboratory, Jordan University of Science and Technology,Jordan;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 微电子学、集成电路(IC);
  • 关键词

  • 入库时间 2022-08-18 01:26:18

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