Effect of Annealing on Ferroelectric Properties of Lanthanum Modified Lead Zirconate Titanate Thin Films

摘要

Thin films of lanthanum modified lead zirconate titanate with chemical formula (Pb_0.95La_0.05Zr_0.54Ti_0.46O₃) were prepared using spin coating method. The sol for the PLZT was prepared in house by metal organic decomposition (MOD) technique. The prepared films were annealed in the temperature range of 550-750°C in a rapid annealing furnace in flowing oxygen to promote crystallinity in the films. Effect of post deposition annealing temperatures on the structure/morphology and ferroelectric properties of the films were examined using X-ray diffraction, atomic force microscopy and ferroelectric tester. Parameters were optimized for obtaining films with excellent ferroelectric properties and low leakage currents. A high value of polarization 72μC/cm2 coupled with a minimum leakage current density of 10−8A/cm2 was obtained from films annealed at temperature of 750°C. The results indicate that choice of proper annealing process is vital to control the structure and morphology which are important parameters to achieve good ferroelectric properties in PLZT films. These films are being used to study the photovoltaic response from such material for their potential use in ferroelectric photovoltaic devices.View full textDownload full textKeywordsPLZT, La, Doping, Ferroelectric film, leakage currentRelated var addthis_config = { ui_cobrand: "Taylor & Francis Online", services_compact: "citeulike,netvibes,twitter,technorati,delicious,linkedin,facebook,stumbleupon,digg,google,more", pubid: "ra-4dff56cd6bb1830b" }; Add to shortlist Link Permalink http://dx.doi.org/10.1080/10584587.2011.637011