I-V Characteristics of a Static Random Access Memory Cell Utilizing Ferroelectric Transistors

摘要

Due to the unique properties of hysteresis and nonlinearity, the use of ferroelectric materials in memory devices is widely researched. This paper presents the current-voltage (I-V) characteristics of a FeFET in the Static Random Access Memory (SRAM) cell. Empirical data will be analyzed using a variety of setup configurations using both MOSFETs as well as FeFETS. The drain current was measured with different gate and drain voltages while polarizing the ferroelectric material. Based on the empirical data, comparisons were made between the different MOSFET and FeFET configurations.View full textDownload full textKeywordsSRAM, FeFET, MOSFETRelated var addthis_config = { ui_cobrand: "Taylor & Francis Online", services_compact: "citeulike,netvibes,twitter,technorati,delicious,linkedin,facebook,stumbleupon,digg,google,more", pubid: "ra-4dff56cd6bb1830b" }; var addthis_config = {"data_track_addressbar":true,"ui_click":true}; Add to shortlist Link Permalink http://dx.doi.org/10.1080/10584587.2012.741390