Measurement of the thickness of dielectric thin films on silicon photodetectors using the angular response to incident linearly polarized light

摘要

A simple and accurate technique for measuring the thickness of dielectric thin films on solid state photodetectors is described. It is based on the angle-of-incidence-dependent response of the detector to incident p(TM)- or s(TE)-polarized monochromatic light. The method is applied to determine the thickness of SiO/sub 2/ films on planar-diffused Si photodiodes to within /spl plusmn/1 nm.