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首页> 外文期刊>IEEE Transactions on Instrumentation and Measurement >NIST comparison of the quantized Hall resistance and the realization of the SI OHM through the calculable capacitor
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NIST comparison of the quantized Hall resistance and the realization of the SI OHM through the calculable capacitor

机译:NIST量化霍尔电阻的比较,以及通过可计算电容器实现的SI OHM

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摘要

The latest NIST result from the comparison of the quantized Hall resistance (QHR) with the realization of the SI ohm obtained from the NIST calculable capacitor is reported. A small difference between the 1988 result and the present result has led to a re-evaluation of the sources and magnitudes of possible systematic errors.
机译:报告了通过比较量化霍尔电阻(QHR)与实现从NIST可计算电容器获得的SI欧姆的比较得出的最新NIST结果。 1988年的结果与目前的结果之间的微小差异导致对可能的系统误差的来源和严重程度进行了重新评估。

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