The effect of trap charging by illumination at various wavelengths on thermally stimulated currents in Si was studied. Selective photoexcitation makes it possible to identify the type (electron or hole ) and depth of traps. Under the assumption that the capture cross section varies as T~-2,a single hole trap with a depth of 0.42 eV and two electron traps at 0.26 and 0.35 eV were identified.
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