Thermally stimulated currents in Si: analysis of rate equations

摘要

Thermally stimulated currents(TSCs)in semiconductors were analyzed theoretically in terms of a single-level model. The rate equations describing TSCs in the single-level model were solved numerically for various process parameters, which made in possible to assess the effect of each parameter on the TSC curve. The effects of physical and instrumental parameters were analyzed: the former characterize the material and Cannot be changed during measurements, and the latter can be varied readily during experiment(applied volt- Age, excitation intensity, etc.).