Thermally Stimulated Currents in Semiconductors: Analysis of Rate Equations for a Single-Level Model And Thermally Stimulated Currents in Si

摘要

Thermally stimulated currents (TSCs) in semiconductors are analyzed theoretically. The rate equa- tions describing TSCs are soled numerically for various heating profiles, which makes it possible to evaluate the ionization energy, concentration, and capture cross section of traps. The slow and fast retrapping approxi- mations are examined for an arbitrary heating profile. A new approach to TSC data processing is proposed: cleaning of a peak from the lower temperature peak by storing the preilluminated material in the dark at the relaxation temperature of the lower temperature peak.