Formation of nickel silicide films from nickel acetylacetonte and organosilicon compounds

摘要

Nickel films were deposited from nickel acetylacetonate vapor on silicon, gallium arsenide, and germanium wafers and SiO_2/Si structures, and their composition and properties were studied. Annealing in dimethyldichlorosilane or hexamethyldisilazane vapor exerts a considerable effect on the composition and properties of Ni/Si structures. Films deposited from the gas phase containing nickel acetylacetonate and an organosilicon compound(OSC)were examined. As found by Auger electron spectroscopy with Ar~+ ion profil- ing of the surface, nickel silicide films can be obtained by Ni(AcAc)_2 vapor deposition followed by annealing the resulting nickel film in OSC vapor and by OSC + Ni(AcAc)_2 vapor deposition.