Photoelectric Properties of TIIn_0.98 Pr_0.02Se_2 Crystals and Resistors

E. M. GojaeV; A. M. Nazarov; E. A. Allakhyarov

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Photoelectric Properties of TIIn_0.98 Pr_0.02Se_2 Crystals and Resistors

机译：TIIn_0.98 Pr_0.02Se_2晶体和电阻的光电性能

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摘要

It is shown that heat treatment and uniaxial compression along the [001] axis increase the photo-sensitivity of TlIn_(0.98)Pr_(0.02)Se_2 crystals and markedly shift their photosensitivity range to longer wavelengths.

机译：结果表明，热处理和沿[001]轴的单轴压缩会增加TlIn_（0.98）Pr_（0.02）Se_2晶体的光敏性，并将它们的光敏性范围明显移至更长的波长。

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来源
《Inorganic materials》 |2011年第12期|p.1311-1313|共3页
作者
E. M. GojaeV; A. M. Nazarov; E. A. Allakhyarov;
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作者单位

Azerbaijani Technical University, pr. Javida 25, Baku, AZ1073 Azerbaijan;

Abdullaev Institute of Physics, Academy of Sciences of Azerbaijan, pr. Javida 33, Baku, AZ1143 Azerbaijan;

Azerbaijani Technical University, pr. Javida 25, Baku, AZ1073 Azerbaijan;

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
原文格式 PDF
正文语种 eng
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入库时间 2022-08-17 13:13:06

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Photoelectric Properties of TIIn_0.98 Pr_0.02Se_2 Crystals and Resistors

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