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首页> 外文期刊>Inorganic materials >Etching Behavior of PbTe and Pb_(1-x)Sn_xTe Crystal Surfaces in Aqueous H_2O_2-HBr-Tartaric Acid Solutions
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Etching Behavior of PbTe and Pb_(1-x)Sn_xTe Crystal Surfaces in Aqueous H_2O_2-HBr-Tartaric Acid Solutions

机译:H_2O_2-HBr-酒石酸水溶液中PbTe和Pb_(1-x)Sn_xTe晶体表面的刻蚀行为

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摘要

The chemical polishing of the surface of single crystals of PbTe and Pb_(1-x)Sn_xTe solid solutions by H_2O_2-HBr-tartaric acid bromine-releasing etchants has been studied for the first time under reproducible hydrodynamic conditions. The dissolution rate of the crystals has been determined as a function of etchant composition, solution stirring rate, and temperature. The polished surfaces have been examined by micro-structural analysis and electron microscopy. We have located the composition boundaries of solutions for the dynamic chemical polishing of the semiconductor materials studied.
机译:在可重现的水动力条件下,首次研究了用H_2O_2-HBr-酒石酸溴脱除剂对PbTe和Pb_(1-x)Sn_xTe固溶体单晶表面进行的化学抛光。晶体的溶解速率已经确定为蚀刻剂组成,溶液搅拌速率和温度的函数。抛光的表面已经通过微观结构分析和电子显微镜检查。我们已经确定了用于研究的半导体材料的动态化学抛光的溶液的组成边界。

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  • 来源
    《Inorganic materials 》 |2014年第7期| 661-666| 共6页
  • 作者单位

    Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, pr. Nauki 41, Kyiv, 03028 Ukraine;

    Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, pr. Nauki 41, Kyiv, 03028 Ukraine;

    Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, pr. Nauki 41, Kyiv, 03028 Ukraine;

    Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, pr. Nauki 41, Kyiv, 03028 Ukraine;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
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