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Obtaining a Material Based on p-SiC and Carbon Fibers Using an Electric Arc Technique

机译:使用电弧技术获得基于p-SiC和碳纤维的材料

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—A method is presented for obtaining a material consisting mainly of carbon fibers with a graphite-like structure (C~(fib)) and a cubic phase of silicon carbide β–SiC using a DC arc plasma. The developed method of synthesis is characterized by a number of advantages, such as no protective gases required, easy implementation, and short duration of the operating cycle in the system (for several seconds). Judging by the data of scanning electron microscopy, the obtained silicon carbide crystals have a typical regular facetting and are characterized by a wide particle size distribution ranging from a size less than 1 μm to tens of microns. The silicon carbide crystals grow on the surface of carbon fibers, whereas their average size exhibits a decrease upon approaching the interface between the surface of graphite fiber and silicon carbide.
机译:-提出了一种使用直流电弧等离子体获得主要由具有石墨状结构(C〜(fib))和立方相碳化硅β-SiC的碳纤维组成的材料的方法。所开发的合成方法具有许多优点,例如不需要保护气体,易于实施以及系统中操作周期短(持续几秒钟)。从扫描电子显微镜的数据来看,所获得的碳化硅晶体具有典型的规则小平面,并且其特征在于宽的粒度分布,其范围从小于1μm到数十微米。碳化硅晶体在碳纤维的表面上生长,而它们的平均尺寸在接近石墨纤维和碳化硅的表面之间的界面时呈现出减小的趋势。

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