机译:最新的3.3 kV 400-A SiC MOSFET的特性和评估
Center for Power Electronics Systems, The Bradley Department of Electrical and Computer Engineering, Virginia Polytechnic Institute and State University, Blacksburg, VA, USA;
Center for Power Electronics Systems, The Bradley Department of Electrical and Computer Engineering, Virginia Polytechnic Institute and State University, Blacksburg, VA, USA;
Center for Power Electronics Systems, The Bradley Department of Electrical and Computer Engineering, Virginia Polytechnic Institute and State University, Blacksburg, VA, USA;
Center for Power Electronics Systems, The Bradley Department of Electrical and Computer Engineering, Virginia Polytechnic Institute and State University, Blacksburg, VA, USA;
Logic gates; Silicon carbide; MOSFET; Silicon; Insulated gate bipolar transistors; Switches; Medium voltage;
机译:最新的3.3 kV 30 A全SiC MOSFET的特性和性能评估
机译:用倾斜离子注入形成的自对准通道的制造与表征3.3 kV SiC DMOSFET
机译:3.3-kV全版本模块,带有沟槽栅极MOSFET用于配电设备
机译:3.3kV 30A分立SiC MOSFET的静态和动态性能表征
机译:6H-αSiC的热氧化电钝化及其表征和在SiC MOSFET中的应用。
机译:多芯片SIC MOSFET模块多物理仿真辅助光学测量的热阻抗表征
机译:使用最先进的SIC MOSFET和SIC二极管进行单相功率因数校正升压转换器的效率和EMI评估