Silicon Carbide advances ― a labour of love

摘要

This book is the update of a two volume set entitled "SiC A Review of Fundamental Questions & Application to Current Device Technology" produced in 1997. This book was forced into being by a material change of emphasis, from considerations of band structures to one of point defects, and where some applied reports had been outdated, writes Professor Dr W J Choyke, University of Pittsburgh, US, who together with his Japanese and German colleagues, Professor Dr H Matsunami, Kyoto University and Dr G Pensl, University of Erlangen, Nuern berg, give a triumverate global view on SiC - with the invaluable help of no editors. Despite regular and valuable conference proceedings of ICSCRM and ECSCRM, it was felt these could not convey the required perspective. Proceedings are not generally available in libraries. Even colleagues, active in the field, cannot always attend conferences, it was pointed out by Choyke. So the book came into being. Organised in the same way as SiC I and SiC II, it was published (well within the aims of device designers) some six months after the delivery of the manuscripts, where the 110 authors,"dedicated souls ... undertook many of the tasks that, in the past, would have been taken on by the book publishers."