Performance Improvement of Pi-gate SOI MOSFET Transistor using High-k Dielectric with Metal Gate

摘要

Pi-gate silicon-on insulator (SOI) MOSFET transistors have emerged as novel devices due to its simple architecture and better performance, better control over short-channel effects, and reduced power dissipation due to reduced gate leakage currents. As the oxide thickness scales below 2nm, leakage currents due to tunnelling increase drastically, leading to high power consumption and reduced device reliability. Replacing the SiO2 gate oxide with a high-k material allows increased gate capacitance without the associated leakage effects. In this paper, we present the results of a 3D numerical simulation of the Pi-gate SOI MOSFET transistor. 3D device structure, based on the technology SOI is described and simulated by using SILVACO TCAD tools, and we compare the electrical characteristics results for titanium nitride (TiN) fabricated on Al2O3 (k approximate to 9), HfO2 (k approximate to 20), and La2O3 (k approximate to 30) gate dielectric. Excellent dielectric properties such as high-k constant, low leakage current, threshold voltage, and electrical characteristics were demonstrated. From the simulation result, it was shown that HfO2 is the best dielectric material with metal gate TiN.