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Accurate Systematic Hot-Spot Scoring Method and Score-Based Fixing Guidance Generation

机译:精确的系统热点评分方法和基于分数的注视制导

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摘要

The researches on predicting and removing of lithographic hot-spots have been prevalent in recent semiconductor industries, and known to be one of the most difficult challenges to achieve high quality detection coverage. To provide physical design implementation with designer's favors on fixing hot-spots, in this paper, we present a noble and accurate hot-spot detection method, so-called "leveling and scoring" algorithm based on weighted combination of image quality parameters (i.e., normalized image log-slope (NILS), mask error enhancement factor (MEEF), and depth of focus (DOF)) from lithography simulation. In our algorithm, firstly, hot-spot scoring function considering severity level is calibrated with process window qualification, and then least-square regression method is used to calibrate weighting coefficients for each image quality parameter. In this way, after we obtain the scoring function with wafer results, our method can be applied to future designs of using the same process. Using this calibrated scoring function, we can successfully generate fixing guidance and rule to detect hot-spot area by locating edge bias value which leads to a hot-spot-free score level. Finally, we integrate the hot-spot fixing guidance information into layout editor to facilitate the user-favorable design environment. Applying our method to memory devices of 60 nm node and below, we could successfully attain sufficient process window margin to yield high mass production.
机译:关于光刻热点的预测和消除的研究在最近的半导体工业中已经很普遍,并且已知是实现高质量检测覆盖率的最困难的挑战之一。为了使物理设计实现在设计人员偏爱固定热点时,本文提出了一种高贵而精确的热点检测方法,即基于图像质量参数(即,光刻仿真得出的归一化图像对数斜率(NILS),掩模误差增强因子(MEEF)和焦深(DOF))。在我们的算法中,首先,使用过程窗口限定对考虑严重性级别的热点评分函数进行校准,然后使用最小二乘回归方法来校准每个图像质量参数的加权系数。这样,在获得晶片结果的计分函数后,我们的方法可以应用于使用相同工艺的未来设计。使用此校准评分功能,我们可以通过定位导致无热点得分水平的边缘偏差值来成功生成固定指导和规则以检测热点区域。最后,我们将热点修复指导信息集成到布局编辑器中,以方便用户使用的设计环境。将我们的方法应用于节点为60 nm及以下的存储设备,我们可以成功获得足够的工艺窗口裕度,从而实现大规模生产。

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