A Simplified Process Modeling for Reverse Short Channel Effect of Threshold Voltage of MOSFET

摘要

We propose an effective model that can repro - duce the reverse short channel effect (RSCE) of the threshold voltage (V_th) of MOSFETs using a conventional process simu - lator that solves one equation for each impurity. The proposed model is developed for local modeling which is effective within the limited process conditions. The proposed model involves the physics in which RSCE is due to the pile up of channel dopant at the Si/SiO_2 interface.