A High-Endurance Read/Write Scheme for Half-V_cc Plate Nonvolatile DRAMs with Ferroelectric Capacitors

摘要

A small data-line-swing read-write scheme is described for half-V_cc plate nonvolatile DRAMs with ferroelectric capacitors designed to achieve high reliability for read/write op- erations. In this scheme, the normal read/write operation holds the data as a charge with a small data-line-swing, and the store operation provides sufficient polarization with a full data-line- swing.