1.0 V Operation Power Heterojunction FET for Digital Cellular Phones

摘要

This paper describes 1.0V operation power per- formance of a double doped AlGaAs/InGaAs/AlGaAs hetero- junction FET for personal digital cellular phones. The devel- oped FET with a multilayer cap consisting of a highly Si-doped GaAs, an undoped GaAs and a highly Si-doped AlGaAs exhib- Ited an on-resistance of 1.3Ω.mm and a maximum drain current Of 620mA/mm.