Low Consumption Power Application of Pulse-Doped GaAs MESFET's

摘要

The application of pulse-doped GaAs MESFET's to a power amplifier module is discussed in this paper. The epitaxial layer structure was redesigned to have a dual pulse-doped structure for power applications, achieving a sufficient gate-drain breakdown voltage with excellent linearity. The measured load-pull characteristics of the redesigned device for the minimum power consumption design was presented. This device was shown to have almost twice the power-added efficiency of a conventional ion-implanted GaAs MESFET. Two kinds of power amplifiers were designed and fabricated, achieving Pout of 28.6 dBm at IM_3 of - 40 dBc with Pdc of 8 W and Pout of 33.0 dBm at IM_3 of - 40 dBc with Pdc of 32 W, respectively.