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Recent Advances in Ultra-High-Speed Waveguide Photodiodes for Optical Communication Systems

机译:用于光通信系统的超高速波导光电二极管的最新进展

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This paper describes the recent advances in semiconductor photodiodes for use in ultra-high-speed optical systems. We developed two types of waveguide photodiodes (WG-PD) - an evanescently coupled waveguide photodiode (EC-WG-PD) and a separated-absorption-and-multiplication waveguide avalanche photodiode (WG-APD). The EC-WG-PD is very robust under high optical input operation because of its distribution of photo current density along the light propagation. The EC-WG-PD simultaneously exhibited a high external quantum efficiency of 70% for both 1310 and 1550nm, and a wide bandwidth of more than 40 GHz. The WG-APD, on the other hand, has a wide bandwidth of 36.5 GHz and a gain-bandwidth product of 170 GHz as a result of its small waveguide mesa structure and a thin multiplication layer. Record high receiver sensitivity of -19.6dBm at 40 Gbps was achieved. Additionally, a monolithically integrated dual EC-WG-PD for differential phase shift-keying (DPSK) systems was developed. Each PD has equivalent characteristics with 3-dB-down bandwidth of more than 40 GHz and external quantum efficiency of 70% at 1550nm.
机译:本文介绍了用于超高速光学系统的半导体光电二极管的最新进展。我们开发了两种类型的波导光电二极管(WG-PD)-van逝耦合波导光电二极管(EC-WG-PD)和分离吸收倍增波导雪崩光电二极管(WG-APD)。 EC-WG-PD在高光输入操作下非常坚固,因为它沿光传播分布有光电流密度。 EC-WG-PD同时在1310和1550nm上都具有70%的高外部量子效率,并且带宽超过40 GHz。另一方面,WG-APD由于其小的波导台面结构和较薄的乘法层而具有36.5 GHz的宽带宽和170 GHz的增益带宽积。在40 Gbps时,接收器灵敏度达到了创纪录的-19.6dBm。此外,还开发了用于差分相移键控(DPSK)系统的单片集成双EC-WG-PD。每个PD具有等效的特性,其3-dB下行带宽超过40 GHz,在1550nm处的外部量子效率为70%。

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