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A 0.7-V Opamp in Scaled Low-Standby-Power FinFET Technology

机译:0.7V运算放大器,采用小规模低待机功率FinFET技术

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摘要

This paper demonstrates a FinFET operational amplifier (opamp), which is suitable, to be integrated with digital circuits in a scaled low-standby-power (LSTP) technology and operates at extremely low voltage. The opamp is consisting of an adaptive threshold-voltage (V_t) differential pair and a low-voltage source follower using independent-double-gate-(IDG-) FinFETs. These two components enable the opamp to extend the common-mode voltage range (CMR) below the nominal V_t even if the supply voltage is less than 1.0 V. The opamp was implemented by our FinFET technology co-integrating common-DG- (CDG-) and IDG-FinFETs. More than 40-dB DC gain and 1-MHz gain-bandwidth product in the 500-mV-wide input CMR at the supply voltage of 0.7 V was estimated with SPICE simulation. The fabricated chip successfully demonstrated the 0.7-V operation with the 480-mV-wide CMR, even though the nominal V_t was 400 mV.
机译:本文演示了FinFET运算放大器(运放),该放大器适合以比例低待机功率(LSTP)技术与数字电路集成,并在极低的电压下工作。该运算放大器由一个自适应阈值电压(V_t)差分对和一个使用独立双栅极(IDG-)FinFET的低压源跟随器组成。通过这两个组件,即使电源电压小于1.0 V,运算放大器也可以将共模电压范围(CMR)扩展到标称V_t以下。该运算放大器是通过我们的FinFET技术实现的,该技术将Common-DG-(CDG- )和IDG-FinFET。通过SPICE仿真估计,在0.7V的电源电压下,在500mV宽的输入CMR中,超过40dB的DC增益和1MHz的增益带宽积。即使标称V_t为400 mV,所制造的芯片也可以在480mV宽的CMR上成功地演示了0.7V工作。

著录项

  • 来源
    《IEICE Transactions on Electronics》 |2012年第4期|p.686-695|共10页
  • 作者单位

    Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba-shi, 305-8568 Japan;

    Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba-shi, 305-8568 Japan;

    Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba-shi, 305-8568 Japan;

    Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba-shi, 305-8568 Japan;

    Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba-shi, 305-8568 Japan;

    Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba-shi, 305-8568 Japan;

    Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba-shi, 305-8568 Japan;

    Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba-shi, 305-8568 Japan;

    Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba-shi, 305-8568 Japan;

    Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba-shi, 305-8568 Japan;

    Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba-shi, 305-8568 Japan;

    Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba-shi, 305-8568 Japan;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    common-double-gate finFET; independent-double-gate finFET; common-mode voltage range; low voltage; differential amplifier; source follower;

    机译:共双栅finFET;独立双栅finFET;共模电压范围低电压;差分放大器源关注者;
  • 入库时间 2022-08-18 00:26:16

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