Impact of Fully Depleted Silicon-On-Insulator Accumulation-mode CMOS on Si(110)

摘要

This paper demonstrates the characteristic of Accumulation-mode Fully Depleted Silicon-On-Insulator (Acc-FD-SOI) MOSFETs fabricated on Si(110). Acc-FD-SOI-nMOSFET's current drivability is 1.2 times higher than conventional Inversion-mode Fully Depleted Silicon-On-Insulator ( Inv-FD-SOI) MOSFETs. The current drivability of nMOSFET and pMOSFET is perfectly equavelent by implementing Accumlation-mode device structure to nMOSFETs on Si(110). A novel CMOS inverter consisted of Inversion-mode pMOSFET and Accumulation-mode nMOSFET shows good characteristic and occupy only half of the area on silicon compared to conventional inverter fabricated on Si(100).