A Class-E amplifier is designed at S-band with our inhouse developed GaN HEMTs. The Class-E amplifier generally described by the time-domain concept can achieve high efficiency performance through switching operation. We have designed the amplifier using a frequency-domain concept instead and integrated all the input/output matching circuitry into one single package. It can achieve an output power of 100W and a drain efficiency of 72.3% at 2.6GHz and the drain efficiency is more than 70% between 2.55GHz and 2.85GHz under pulse operation with an applied drain voltage of 22V. With an applied 18V drain voltage, it can realize a maximum drain efficiency of 78.1% and an output power of 60W at 2.7GHz and the drain efficiency is more than 70% between 2.5GHz and 2.9GHz.%GaN HEMTを用いてS帯内部整合型E級増幅器の設計・試作をした．スイッチ動作による高効率動作として時間領域で説明されるE級動作増幅器を周波数領域により設計を行い，入出力整合回路のすべてをパッケージに入れた．ドレーン電圧22Vでパルス動作による測定を行った結果，2.6GHzでドレーン効率72.3％，出力電力100W,2.55GHzから2.85GHzでドレーン効率70％以上を実現した．またドレーン電圧18Vでは，2.7GHzでドレーン効率の最大値は78.1％で出力電力60W,2.5GHzから2.9GHzでドレーン効率70％以上を実現した．
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