フレキシブルシリコーンゴム基板上へのマイクロ光学部品の集積化

摘要

Photochemical surface modifications of silicone ([SiO(CH_3)_2]_n) rubber have been successfully demonstrated by using various UV pulsed lasers; a 157-nm F_2 laser, and a 193-nm ArF, and by using the 266-nm fourth harmonic of a Nd:YAG laser. The F_2 laser modified silicone into transparent silica (SiO_2). By switching the light source from a F_2 laser to an ArF excimer laser or to the fourth harmonic of a Nd:YAG laser, we could modify the surface of the silicone rubber into a photoluminescent material or into amorphous carbon, respectively. Based on the photochemical modifications, micron-sized silica optical waveguides and white light sources could be integrated into a silicone rubber chip.%F_2レーザー（波長157nm），ArFレーザー（波長193nm）およびNd：YAGレーザーの第4高調波（波長266nm）誘起光化学反応を基にして，シリカガラス（SiO_2）光導波路およびマイクロ白色光源などのマイクロ光学素子を，シリコーン（ポリジメチルシロキサン）ゴムチップ上に集積化するための基礎的手法について述べる．