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Effect of ultra-thin Yb layer on n-type characteristics of pentacene based MOS diodes

机译：Yb超薄层对并五苯MOS二极管n型特性的影响

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摘要

In order to obtain n-type characteristics of pentacene, we have fabricated pentacene based metal-oxide-semiconductor (MOS) diodes with 1 nm-thick Yb layer between pentacene and SiO_2 gate insulator. The effect of Yb thickness and the deposition temperature of pentacene for electrical properties of the MOS diodes were investigated. It is found that the pentacene based MOS diodes with 1 nm-thick Yb layer fabricated at 30℃ showed excellent n-type capacitance-voltage (C-V) characteristics.
机译：为了获得并五苯的n型特性，我们制造了在并五苯和SiO_2栅绝缘体之间具有1 nm厚的Yb层的并五苯金属氧化物半导体（MOS）二极管。研究了并五苯的Yb厚度和沉积温度对MOS二极管电学性能的影响。发现在30℃下制备的具有1nm厚的Yb层的并五苯基MOS二极管表现出优异的n型电容-电压（C-V）特性。

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  • 来源
    《電子情報通信学会技術研究報告》 |2010年第241期|p.21-24|共4页
  • 作者

    Y-U Song; H. Ishiwara; S. Ohmi;

  • 作者单位

    Dept. of Electronics and Applied Physics, Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, J2-72,4259 Nagatsuta, Midori-ku, Yokohama, 226-8502, Japan;

    Dept. of Electronics and Applied Physics, Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, J2-72,4259 Nagatsuta, Midori-ku, Yokohama, 226-8502, Japan,Dept. of Physics, Division of Quantum Phases and Device, Konkuk University, Seoul 143-701, Korea;

    Dept. of Electronics and Applied Physics, Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, J2-72,4259 Nagatsuta, Midori-ku, Yokohama, 226-8502, Japan;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    pentacene; n-type; MOS diode; thin yb layer;

    机译：并五苯;n型MOS二极管;yb薄层;
  • 入库时间 2022-08-18 00:33:55

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