Investigation of n-type pentacene based MOS diodes with ultra-thin metal interface layer

摘要

N-type pentacene based metal-oxide-semiconductor (MOS) diodes were fabricated to realize complementary-metal-oxide-semiconductor (CMOS) on a same substrate using ultra-thin Yb layer such as 0.5-3 nm. The Yb layer with low work function (2.7 eV) help to improve n-type characteristics of pentacene because lowest unoccupied molecular orbital (LUMO) level of pentacene is 3.0 eV. From the capacitance-voltage (C-V) measurements, the fabricated devices with 1-2 nm-thick Yb exhibited excellent n-type C-V characteristics despite the devices were measured in air. It is suggested that Yb interface layer is effective for improving n-type property of pentacene.