Nano-Electromechanical (NEM) Nonvolatile Memory for Low-Power Electronics

摘要

Some nano-electromechanical (NEM) nonvolatile memory cells will be discussed such as NEMory cells, T cells and H cells. NEM nonvolatile memory cells are considered as alternative embedded nonvolatile memory cells because they have advantages of CMOS-compatible process, high packaging density, board space saving, low program / erase voltage, large sensing margin, low fabrication cost and short time-to-market. Since the first CMOS-compatible NEM nonvolatile memory (NEMory) cell was proposed, T cell has been proposed for 2-bit operation and H cell has been proposed for 4-bit operation.