Investigation of Abnormal Drain Current Increase of Tunneling Field-Effect Transistors

摘要

A tunneling field-effect transistor (TFET) is a promising candidate to replace a MOSFET because the subthreshold swing (SS) of the TFET can be reduced below the 60 mV/dec at room temperature. However, the slope of log(I_(DS))-V_(GS) curve of the TFET becomes smaller as gate voltage (V_(GS)) increases and eventually becomes smaller than that of the MOSFET when V_(GS) is high. It is problematic in that the drain current (I_(DS)) of the TFET cannot exceed that of the MOSFET. In this paper, we investigated the physical origin of the abnormal drain current increase in terms of band-to-band tunneling and drift mechanism.