Dual-gate ZnO thin-film transistors with SiNx as Dielectric Layer

摘要

We report on the fabrication of dual-gate ZnO thin-film transistors with 200-nm thickness SiNx for both top and bottom dielectrics. The ZnO film was deposited by RF magnetron sputtering on SiO_2/Si substrates at 100℃. This TFT has a channel width of 100-um and channel length of 5-um. The fabricated dual-gate ZnO TFTs exhibits a field effect mobility of about 0.42 cm~2/V s, a subthreshold swing 390 mV/decade, an on-off ratio 4.3 × 10~8, and a threshold voltage 0.9V, which are greatly improved characteristics compared with conventional bottom-gate ZnO TFTs.