A V-band Common-Source Low Noise Amplifier in a 0.13 μm RFCMOS Technology

摘要

In this work, a V-band low noise amplifier (LNA) is developed in a commercial 0.13 μm RFCMOS technology. Common-source (CS) topology, known to show a better noise performance than the cascode topology, was adopted and 4-stage was employed to achieve a sufficient gain at the target frequency near the cutoff frequency f_T. The measured gain was 18.6 dB with V_(DD )= 1.2 V and increased up to 20.2 dB with V_(DD ) = 1.8 V at 66 GHz. The simulated NF showed a minimum value of 7.5 dB at 63 GHz. DC power consumption was 24 mW with V_(DD ) = 1.2 V. The size of the fabricated circuit is as compact as 0.45 mm × 0.69 mm.