For GaN films on sapphire, the film bend due to the difference of thermal expansions and lattice constants between the epilayers and substrate. In order to fabricate nitride devices with uniform properties in the wafer, it is important to reduce a curvature of the wafer during MOVPE growth process. In the present work, we used selective-area-growth technique to reduce the curvature and strain in GaN by fabricating voids. Furthermore, curvature of GaN film was controlled during the growth process.%GaNをサファイア上に成長させると，熱膨張係数差や格子定数差により基板に反りが生じる。面内均一性に優れたデバイスを作製するためには,成長時における基板の反りの低減が必要である。本研究では，基板の反り低減を目的に選択成長法を用いてGaN膜中にポイドを形成し歪み緩和を行い，GaN成長における基板の反り制御を行った。
展开▼
