Effect of Passivation on Drain Current Dispersion for A1GaN/GaN HEMTs

摘要

A1GaN/GaN HEMTs with different passivation layers were studied using pulsed Ⅰ-V system. The maximum drain current showed higher values at pulsed conditions as compared with DC for SiN passivation, and vice versa for Al_2O_3, SiO_2 and without passivation. The drain current decreased with increasing the on-state time for SiN, which indicated that the most probable location of trap was at the A1GaN layer beneath the gate Increasing tendency of drain current with increasing on-state time indicated that the surface traps were dominant for this behavior, which was the case for Al_2O_3, SiO_2, and without passivation.