首页> 外文期刊>IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control >Frequency Dependence of Coercive Fields of [001]- and [011]-Poled Rhombohedral Pb(In1/2Nb1/2)O₃-Pb(Mg1/3Nb2/3)O₃-PbTiO₃ Single Crystals
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Frequency Dependence of Coercive Fields of [001]- and [011]-Poled Rhombohedral Pb(In1/2Nb1/2)O₃-Pb(Mg1/3Nb2/3)O₃-PbTiO₃ Single Crystals

机译:矫顽织物的频率依赖性 - 和[011] - poLed rhombohedral pb(In1 / 2nb1 / 2)O = pb(Mg1 / 3nb2 / 3)O =Pbtio₃单晶

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摘要

Relaxor-PbTiO3 (PT-based) ferroelectric single crystals are important for many piezoelectric applications because of their outstanding performances. In order to expand their usage and avoid the failure during application, frequency dependence of coercive fields E-C for [001]- and [011]-poled rhombohedral Pb(In1/2Nb1/2)O-3-Pb(Mg1/3Nb2/3)O-3-PbTiO3 (PIN-PMN-PT) single crystals was investigated from the frequency of 1 Hz to 300 kHz by using hysteresis loop measurement (frequency: from 1 Hz to 2 kHz) and a critical value method (frequency: from 5 to 300 kHz). The results showed that the coercive field E-C , remnant polarization P-r, and saturation polarization P-s strongly depended on the crystal orientation and frequency. Compared with the [001]-poled crystals, the [011]-poled PIN-PMN-PT single crystals possessed higher E-C , P-r, and P-s at the same testing frequencies. With increasing frequency from 1 Hz to 300 kHz, the coercive fields E-C of the [001]- and [011]-poled PIN-PMN-PT single crystals increased from 4.0 and 4.8 kV/cm to 11.5 and 14.9 kV/cm, respectively. Moreover, the frequency dependence of the coercive fields was found to be consistent with the growth kinetics model, where the coercive fields E-C were proportional to f(beta). This work benefits to the design of piezoelectric devices based on PIN-PMN-PT single crystals operated at high frequencies and high driving fields.
机译:由于其出色的性能,松弛器-PBTIO3(基于PT型)铁电单晶对于许多压电应用很重要。为了扩展其使用率并避免应用过程中的失败,胁迫字段EC的频率依赖性为[011] -poled rhombohedral pb(In1 / 2nb1 / 2)O-3-Pb(Mg1 / 3nb2 / 3 )通过使用滞后回路测量(频率:从1 Hz至2kHz)和临界值方法(频率:从),从1Hz至300kHz的频率研究O-3-PPTIO3(PIN-PMN-PT)单晶。(频率:来自5至300 kHz)。结果表明,强制性场E-C,残余偏振P-R和饱和偏振P-S强烈地依赖于晶体取向和频率。与[001]晶体相比,在相同的测试频率下具有更高的E-C,P-R和P-S的POLED PIN-PMN-PT单晶。随着频率的增加,从1 Hz到300 kHz,[001] - 和[011] - poled Pin-PMN-PT单晶的矫顽件EC分别从4.0和4.8kV / cm增加到11.5和14.9 kV / cm 。此外,发现矫顽场的频率依赖性与生长动力学模型一致,其中矫顽田E-C与F(β)成比例。这项工作利用基于高频和高驱动场操作的PIN PMN-PT单晶的压电器件设计。

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    Xi An Jiao Tong Univ Sch Elect & Informat Engn Elect Mat Res Lab Key Lab Minist Educ Xian 710049 Peoples R China|Xi An Jiao Tong Univ Int Ctr Dielect Res Sch Elect & Informat Engn Xian 710049 Peoples R China;

    Xi An Jiao Tong Univ Sch Elect & Informat Engn Elect Mat Res Lab Key Lab Minist Educ Xian 710049 Peoples R China|Xi An Jiao Tong Univ Int Ctr Dielect Res Sch Elect & Informat Engn Xian 710049 Peoples R China;

    Xi An Jiao Tong Univ Sch Elect & Informat Engn Elect Mat Res Lab Key Lab Minist Educ Xian 710049 Peoples R China|Xi An Jiao Tong Univ Int Ctr Dielect Res Sch Elect & Informat Engn Xian 710049 Peoples R China;

    Xi An Jiao Tong Univ Sch Elect & Informat Engn Elect Mat Res Lab Key Lab Minist Educ Xian 710049 Peoples R China|Xi An Jiao Tong Univ Int Ctr Dielect Res Sch Elect & Informat Engn Xian 710049 Peoples R China;

    Xi An Jiao Tong Univ Sch Elect & Informat Engn Elect Mat Res Lab Key Lab Minist Educ Xian 710049 Peoples R China|Xi An Jiao Tong Univ Int Ctr Dielect Res Sch Elect & Informat Engn Xian 710049 Peoples R China;

    Xi An Jiao Tong Univ Sch Elect & Informat Engn Elect Mat Res Lab Key Lab Minist Educ Xian 710049 Peoples R China|Xi An Jiao Tong Univ Int Ctr Dielect Res Sch Elect & Informat Engn Xian 710049 Peoples R China;

    Xi An Jiao Tong Univ Sch Elect & Informat Engn Elect Mat Res Lab Key Lab Minist Educ Xian 710049 Peoples R China|Xi An Jiao Tong Univ Int Ctr Dielect Res Sch Elect & Informat Engn Xian 710049 Peoples R China;

    Xi An Jiao Tong Univ Sch Elect & Informat Engn Elect Mat Res Lab Key Lab Minist Educ Xian 710049 Peoples R China|Xi An Jiao Tong Univ Int Ctr Dielect Res Sch Elect & Informat Engn Xian 710049 Peoples R China;

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    Coercive fields; frequency dependence; Pb(In1/2Nb1/2)O-3-Pb(Mg1/3Nb2/3)O-3-PbTiO3 (PIN-PMN-PT); single crystals;

    机译:矫顽田;频率依赖性;Pb(In1 / 2NB1 / 2)O-3-PB(Mg1 / 3NB2 / 3)O-3-PBTIO3(PIN-PMN-PT);单晶;

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